Перегляд за автором "Fodchuk, I."

Сортувати за: Порядок: Результатів:

  • Determination of structural homogeneity of synthetic diamonds from analysis of Kikuchi lines intensity distribution 
    Fodchuk, I.; Balovsyak, S.; Borcha, M.; Garabazhiv, Ya.; Tkach, V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    It has been suggested the technique based on analysis of geometry and intensity distribution profiles in Kikuchi patterns obtained due to electron backscattering diffraction for defining structural imperfection of diamond ...
  • Some characteristics of semiconductor HgCdMnZnTe solid solution crystals 
    Popenko, N.; Ivanchenko, I.; Brovenko, I.; Zhigalov, A.; Karelin, S.; Gorbatyuk, I.; Ostapov, S.; Dremlyuzhenko, S.; Rarenko, I.; Zaplitnyi, R.; Fodchuk, I.; Deibuk, V.G. (Functional Materials, 2006)
    А novel semiconductor solid solution HgCdMnZnTe containing up to 5 % of manganese and zinc has been studied. Microhardness of these crystals and galvanomagnetic characteristics have been measured out as well as the X-ray ...
  • The influence of ion implantation by phosphorous on structural changes in porous silicon 
    Swiatek, Z.; Lytvynchuk, I.; Fodchuk, I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Structural changes in the surface layer of technologically treated silicon by ion implantation, chemical etching, and their combined action have been investigated by the X-ray diffractometry methods. The functional and ...